Effect of Mg doping on carrier recombination in GaN
Author:
Affiliation:
1. Department of Applied Physics, KTH Royal Institute of Technology, AlbaNova University Center 1 , Stockholm 10691, Sweden
2. Materials Department, University of California 2 , Santa Barbara, California 93106, USA
Abstract
Funder
Energimyndigheten
Simons Foundation
National Science Foundation
U.S. Department of Energy
Sandia National Laboratories
UCSB-Collaborative Research in Engineering, Science and Technology
Solid State Lighting and Energy Electronics Center
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0157378/18093411/085703_1_5.0157378.pdf
Reference33 articles.
1. Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate
2. Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate
3. Investigation on minority carrier lifetime, diffusion length and recombination mechanism of Mg-doped GaN grown by MOCVD
4. Improved minority carrier lifetime in p-type GaN by suppressing the non-radiative recombination process
5. Influence of polarities on optical properties of Mg-doped GaN films grown on GaN free-standing substrates by MOCVD
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