Characteristics of metal-ferroelectric-insulator-silicon structures with ferroelectric (Pb0.8Ba0.2)ZrO3 thin films and (Ba0.5Sr0.5)TiO3 buffer layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2186103
Reference8 articles.
1. Preparation and Rapid Thermal Annealing Effect of(Ba,Sr)TiO3Thin Films
2. Enhanced electrical properties of Ba0.5Sr0.5TiO3 thin films grown by ultraviolet-assisted pulsed-laser deposition
3. Model for interface formation and the resulting electrical properties for barium–strontium–titanate films on silicon
4. Effects of nitridation of silicon and repeated spike heating on the electrical properties of SrTiO3 gate dielectrics
5. Improvement of Electrical Properties and Reliability of ( Ba0.5Sr0.5 ) TiO3 Thin Films on Si Substrates by N2O Prenitridation
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1. Pb(Zr0.52Ti0.48)O3memory capacitor on Si with a polycrystalline silicon/SiO2stacked buffer layer;Journal of Semiconductors;2011-09
2. Characterization of Pt/BiFeO3/ZrO2/Si Capacitors for Memory Applications;Ferroelectrics;2010-10-29
3. Low-temperature fabrication and properties of the highly oriented Bi3.15Nd0.85Ti3O12 thin films deposited on different substrates;Journal of Alloys and Compounds;2010-10
4. Multiferroic thin-film integration onto semiconductor devices;Journal of Physics: Condensed Matter;2010-09-23
5. The electrical and switching properties of a metal-ferroelectric (Bi3.15Nd0.85Ti3O12)-insulator (Y2O3-stabilized ZrO2)-silicon diode;Applied Physics Letters;2010-09-06
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