Pb(Zr0.52Ti0.48)O3memory capacitor on Si with a polycrystalline silicon/SiO2stacked buffer layer
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistor
2. Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3)-semiconductor capacitors for nonvolatile memory applications
3. Low voltage lead titanate/Si one-transistor ferroelectric memory with good device characteristics
4. The thermal stability of one-transistor ferroelectric memory with Pt-Pb/sub 5/Ge/sub 3/O/sub 11/Ir-Poly-SiO/sub 2/-Si Gate Stack
5. Impact of HfO2 buffer layers on data retention characteristics of ferroelectric-gate field-effect transistors
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