Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120374
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1. Signal magnitudes in high density ferroelectric memories
2. Characterization of an N-channel 1T-1C nonvolatile memory cell using ferroelectric SrBi2Ta2O9 as the capacitor dielectric
3. Electrical properties of PZT thin films for memory application
4. Advantages of RuOxBottom Electrode in the Dielectric and Leakage Characteristics of (Ba,Sr)TiO3Capacitor
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