Notice of Removal: A Novel Metal-Ferroelectric-Insulator-Silicon FET With Selectively Nucleated Lateral Crystallized Pb(Zr,Ti)O3 and ZrTiO4 Buffer for Long Retention and Good Fatigue-Reference-Cited by-同舟云学术

Notice of Removal: A Novel Metal-Ferroelectric-Insulator-Silicon FET With Selectively Nucleated Lateral Crystallized Pb(Zr,Ti)O3 and ZrTiO4 Buffer for Long Retention and Good Fatigue

Published:2015-10 Issue:10 Volume:36 Page:1033-1036
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Park Jae Hyo,Joo Seung Ki

Funder

Brain Korea 21 Program for Leading Universities and Students through the Seoul National University (SNU) Materials Division for Educating Creative Global Leaders

Eui-San Research Center, Research Institute of Advanced Materials, SNU

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7274447/07225127.pdf?arnumber=7225127

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4. Retraction: “Multibit ferroelectric field-effect transistor with epitaxial-like Pb(Zr,Ti)O3” [J. Appl. Phys. 119, 124108 (2016)];Journal of Applied Physics;2017-11-07

5. Retraction: “Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance” [Appl. Phys. Lett. 108, 103504 (2016)];Applied Physics Letters;2017-02-13