Retraction: “Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance” [Appl. Phys. Lett. 108, 103504 (2016)]
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4975639
Reference4 articles.
1. Notice of Removal: A Novel Metal-Ferroelectric-Insulator-Silicon FET With Selectively Nucleated Lateral Crystallized Pb(Zr,Ti)O3 and ZrTiO4 Buffer for Long Retention and Good Fatigue
2. Ultimate multibit 1T-FeRAM with selectively nucleated grown single-grain PbZr0.52Ti0.48O3for very-large-scale-integrated memory
3. Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor
4. Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance
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