Characterization of an N-channel 1T-1C nonvolatile memory cell using ferroelectric SrBi2Ta2O9 as the capacitor dielectric-Reference-Cited by-同舟云学术

Characterization of an N-channel 1T-1C nonvolatile memory cell using ferroelectric SrBi2Ta2O9 as the capacitor dielectric

Published:1995-11 Issue:1-4 Volume:11 Page:145-160
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Melnick B. M.¹²,Gregory J.¹³,Paz De Araujo C. A.¹

Affiliation:

1. a Symetrix Corporation , Colorado Springs, CO, 80918

2. b Presently at Motorola, Phoenix Corporate Research Laboratories , Tempe, AZ, 85284

3. c Presently at Symbios (formerly NCR) , Colorado Springs, CO, 80916

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589508013587

Reference8 articles.

1. Signal magnitudes in high density ferroelectric memories

2. Melnick , B. M. Gallegos , R. and Araujo , C. 1991. Proceedings of the 3rd International Symposium on Integrated Ferroelectrics. 1991. pp.547

3. Melnick , B. M. Scott , M. C. Araujo , C. McMillan , L. and Mihara , T. 1992. Proceedings of the 4th International Symposium on Integrated Ferroelectrics. 1992. pp.221

4. Fatigue and retention of Pb(Zr0.53Ti0.47)O3 thin film capacitors with Pt and RuO2 electrodes

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