The electrical and switching properties of a metal-ferroelectric (Bi3.15Nd0.85Ti3O12)-insulator (Y2O3-stabilized ZrO2)-silicon diode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3486464
Reference20 articles.
1. Applications of Modern Ferroelectrics
2. Characteristics of metal-ferroelectric-insulator-semiconductor diodes composed of Pt electrodes and epitaxial Sr0.8Bi2.2Ta2O9(001)/SrTiO3(100)/Si(100) structures
3. Metal-ferroelectric (BiFeO3)-insulator (Y2O3)-semiconductor capacitors and field effect transistors for nonvolatile memory applications
4. A New Metal–Ferroelectric$(hboxPbZr_0.53hboxTi_0.47hboxO_3)$–Insulator$(hboxDy_2hboxO_3)$–Semiconductor (MFIS) FET for Nonvolatile Memory Applications
5. Fabrication and characterization of metal-ferroelectric (PbZr0.6Ti0.4O3)-insulator (La2O3)-semiconductor capacitors for nonvolatile memory applications
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