Fabrication and characterization of metal-ferroelectric (PbZr0.6Ti0.4O3)-insulator (La2O3)-semiconductor capacitors for nonvolatile memory applications-Reference-Cited by-同舟云学术

Fabrication and characterization of metal-ferroelectric (PbZr0.6Ti0.4O3)-insulator (La2O3)-semiconductor capacitors for nonvolatile memory applications

Published:2009-03-15 Issue:6 Volume:105 Page:061625
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Juan Trevor Pi-Chun,Lin Cheng-Li,Shih Wen-Chieh,Yang Chin-Chieh,Lee Joseph Ya-Min,Shye Der-Chi,Lu Jong-Hong

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3055415

Reference16 articles.

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3. Preparation ofSrBi2Ta2O9Film at Low Temperatures and Fabrication of a Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor UsingAl/SrBi2Ta2O9/CeO2/Si(100)Structures

4. Proceedings of the 12th IEEE International Symposium, ISAF;Park J. D.,2000

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