Metal-ferroelectric (BiFeO3)-insulator (Y2O3)-semiconductor capacitors and field effect transistors for nonvolatile memory applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3114403
Reference15 articles.
1. Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structures
2. Characterization of ferroelectricity in metal/ferroelectric/insulator/semiconductor structure by pulsed C–V measurement; Ferroelectricity in YMnO3/Y2O3/Si structure
3. The characterization of retention properties of metal–ferroelectric (PbZr0.53Ti0.47O3)–insulator (Dy2O3, Y2O3)–semiconductor devices
4. Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Structure Using SrBi$_{\bf 2}$Ta$_{\bf 2}$O$_{\bf 9}$ as the Ferroelectric Material
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