Low-temperature fabrication and properties of the highly oriented Bi3.15Nd0.85Ti3O12 thin films deposited on different substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference32 articles.
1. Enhanced Ferroelectric Properties of Nitrogen-Doped Bi4Ti3O12 Thin Films
2. Ferroelectric Memories
3. Large remanent polarization in ferroelectric BiFeO3–PbTiO3 thin films on Pt∕Si substrates
4. Effects of a Bi2Ti2O7 seeding layer on properties of Bi3.5Nd0.5Ti3O12 thin film
5. Effects of Bi2Ti2O7 buffer layer on memory properties of BiFe0.95Mn0.05O3 thin film
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1. Epitaxial growth and magnetic/transport properties of La0.7Sr0.3MnO3 thin films grown on SrTiO3 with optimized growth conditions;RSC Advances;2017
2. Improvement of nucleation and electrical properties of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films with an upper Bi4Ti3O12 buffer layer;Journal of Sol-Gel Science and Technology;2016-08-05
3. Influence of the annealing temperature of the Bi4Ti3O12 seeding layer on the structural and electrical properties of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films;RSC Advances;2016
4. Enhanced memory characteristics by interface modification of ferroelectric LiNbO3 films on Si using ZnO buffers;Journal of Alloys and Compounds;2014-06
5. White light emission in Tm3+/Er3+/Yb3+ tri-doped Y2O3 transparent ceramic;Journal of Alloys and Compounds;2011-02
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