Influence of the annealing temperature of the Bi4Ti3O12 seeding layer on the structural and electrical properties of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films-Reference-Cited by-同舟云学术

Influence of the annealing temperature of the Bi4Ti3O12 seeding layer on the structural and electrical properties of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films

Published:2016 Issue:91 Volume:6 Page:88668-88673
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zhang W. L.¹²³⁴⁵,Tang M. H.¹²³⁴⁵,Xiong Y.⁶³⁴⁵,Wang K.¹²³⁴⁵,Wang Z. P.⁷⁸⁹⁵,Xiao Y. G.¹²³⁴⁵,Yan S. A.¹²³⁴⁵,Li Z.¹²³⁴⁵,He J.¹⁰¹¹¹²¹³

Affiliation:

1. Key Laboratory of Key Film Materials & Application for Equipments (Hunan Province)

2. School of Material Sciences and Engineering

3. Xiangtan University

4. Xiangtan

5. China

6. The School of Mathematics and Computational Science

7. School of Automotive Engineering

8. Weifang University of Science and Technology

9. Weifang

10. Pacific Geoscience Centre

11. Geological Survey of Canada

12. Sidney

13. Canada V8L 4B2

Abstract

Highly (117)-preferred Bi_3.15Nd_0.85Ti_2.99Mn_0.01O₁₂ (BNTM) thin films with a Bi₄Ti₃O₁₂ (BTO) seeding layer were prepared. The effects of BTO layer under annealing temperature from 550 to 700 °C on the structural and electrical properties of BNTM were studied.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA13717B

Reference26 articles.

1. Ferroelectric-gate thin-film transistors with Bi3.15Nd0.85Ti3O12 gate insulators on LaNiO3-buffered Si substrates

2. A ferroelectric tunnel junction based on the piezoelectric effect for non-volatile nanoferroelectric devices

3. Low-temperature fabrication and properties of the highly oriented Bi3.15Nd0.85Ti3O12 thin films deposited on different substrates

4. Electrical properties of La0.6Ca0.4MnO3–Bi3.4Nd0.6Ti3O12 thin films derived by a sol–gel process

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