Impact of the radiation effect on the energy storage density and wake-up behaviors of antiferroelectric-like Al-doped HfO2 thin films-Reference-Cited by-同舟云学术

Impact of the radiation effect on the energy storage density and wake-up behaviors of antiferroelectric-like Al-doped HfO2 thin films

Published:2020 Issue:38 Volume:22 Page:21893-21899
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Zhang W. L.¹²³⁴^ORCID,Mao Y. H.¹²³⁴,Cui L.¹²³⁴,Tang M. H.⁵⁶⁷⁴^ORCID,Su P. Y.¹²³⁴,Long X. J.¹²³⁴,Xiao Y. G.⁵⁶⁷⁴,Yan S. A.⁸⁶⁷⁴^ORCID

Affiliation:

1. Key Laboratory of Micro Nano Optoelectronic Devices and Intelligent Perception Systems

2. Yangtze Normal University

3. Chongqing

4. China

5. School of Material Sciences and Engineering

6. Xiangtan University

7. Xiangtan

8. School of Mechanical Engineering

Abstract

The effect of the γ-ray total dose radiation on the energy storage density (ESD) and the phase transition of antiferroelectric-like (AFE-like) Al-doped HfO₂ (HfAlO) thin films was investigated.

Funder

National Natural Science Foundation of China

National Basic Research Program of China

State Key Laboratory of Intense Pulsed Radiation Simulation and Effect

Natural Science Foundation of Hunan Province

Chongqing Municipal Education Commission

Natural Science Foundation of Chongqing

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CP/D0CP04196C

Reference27 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Review and perspective on ferroelectric HfO2-based thin films for memory applications

3. Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

4. Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric Hf x Zr 1−x O 2 films

5. Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage

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