High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3523358
Reference18 articles.
1. Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers
2. High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions
3. Formation of ohmic contacts to ultra-thin channel AlN/GaN HEMTs
4. GaN-Based RF Power Devices and Amplifiers
5. Effect of Al Composition and Gate Recess on Power Performance of AlGaN/GaN High-Electron Mobility Transistors
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1. Linearity improvement in graded channel AlGaN/GaN HEMTs for high-speed applications;Physica Scripta;2023-09-14
2. Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures;APL Materials;2022-11-01
3. Polarization-Induced 2D Hole Gases in Undoped (In)GaN/AlN Heterostructures;Springer Theses;2022
4. Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate;Science China Information Sciences;2021-10-18
5. High-conductivity polarization-induced 2D hole gases in undoped GaN/AlN heterojunctions enabled by impurity blocking layers;Journal of Applied Physics;2021-07-14
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