Formation of ohmic contacts to ultra-thin channel AlN/GaN HEMTs
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference10 articles.
1. AlGaN/GaN high electron mobility transistors with InGaN back-barriers
2. AlN/GaN Insulated-Gate HFETs Using Cat-CVD SiN
3. Low interface state density AlN/GaN MISFETs
4. AlN/GaN insulated gate heterostructure FET with regrown n+GaN ohmic contact
5. Performance of AlN/GaN Heterostructure Metal Insulator Semiconductor Field Effect Transistor Based on Two-dimensional Monte Carlo Simulation
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4. Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors;IEEE Journal of the Electron Devices Society;2019
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