High-conductivity polarization-induced 2D hole gases in undoped GaN/AlN heterojunctions enabled by impurity blocking layers-Reference-Cited by-同舟云学术

High-conductivity polarization-induced 2D hole gases in undoped GaN/AlN heterojunctions enabled by impurity blocking layers

Author:

Chaudhuri Reet¹^ORCID,Chen Zhen²^ORCID,Muller David A.²³^ORCID,Xing Huili Grace¹³⁴^ORCID,Jena Debdeep¹³⁴^ORCID

Affiliation:

1. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA

2. Department of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA

3. Kavli Institute of Nanoscience, Cornell University, Ithaca, New York 14853, USA

4. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 , USA

Funder

Intel Corporation

Air Force Office of Scientific Research

National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference31 articles.

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