Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate-Reference-Cited by-同舟云学术

Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate

Published:2021-10-18 Issue:2 Volume:65 Page:
ISSN:1674-733X
Container-title:Science China Information Sciences
language:en
Short-container-title:Sci. China Inf. Sci.

Author:

Zhao Dujun,Wu Zhaoxi,Duan Chao,Mei Bo,Li Zhongyang,Wang Zhongxu,Tang Qing,Yang Qing,Wu Yinhe,Zhang Weihang,Liu Zhihong,Zhao Shenglei,Zhang Jincheng,Hao Yue

Publisher

Springer Science and Business Media LLC

Subject

General Computer Science

Link

https://link.springer.com/content/pdf/10.1007/s11432-020-3166-9.pdf

Reference17 articles.

1. Wu Y H, Zhang J C, Zhao S L, et al. More than 3000 V reverse blocking Schottky-drain AlGaN-channel HEMTs With > 230 MW/cm2 power figure-of-merit. IEEE Electron Device Lett, 2019, 40: 1724–1727

2. Chen K J, Häberlen O, Lidow A, et al. GaN-on-Si power technology: devices and applications. IEEE Trans Electron Dev, 2017, 64: 779–795

3. Lei J, Wei J, Tang G, et al. Reverse-blocking normally-OFF GaN double-channel MOS-HEMT with low reverse leakage current and low ON-state resistance. IEEE Electron Device Lett, 2018, 39: 1003–1006

4. Ma J, Zhu M H, Matioli E. 900 V reverse-blocking GaN-on-Si MOSHEMTs with a hybrid tri-anode Schottky drain. IEEE Electron Device Lett, 2017, 38: 1704–1707

5. Zhou C H, Chen W, Piner E L, et al. Schottky-ohmic drain AlGaN/GaN normally off HEMT with reverse drain blocking capability. IEEE Electron Device Lett, 2010, 31: 668–670

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