TCAD Simulation of the Effect of Buffer Layer Parameters on Single Event Burn-Out in p-GaN Gate HEMTs-Reference-Cited by-同舟云学术

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TCAD Simulation of the Effect of Buffer Layer Parameters on Single Event Burn-Out in p-GaN Gate HEMTs

Published:2024-07 Issue:7 Volume:71 Page:4119-4124
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Ga¹^ORCID,Zhao Shenglei¹^ORCID,Wang Zhizhe²^ORCID,Song Xiufeng¹^ORCID,Liu Shuang³^ORCID,Sun Xuejing¹,Yu Longyang¹^ORCID,You Shuzhen¹^ORCID,Liu Zhihong¹,Hao Yue¹^ORCID,Zhang Jincheng¹^ORCID

Affiliation:

1. Key Laboratory of Wide Bandgap Semiconductor Materials, School of Microelectronics, Xidian University, Xi’an, China

2. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, China

3. Southwest China Research Institute of Electronic Equipment, Chengdu, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Fundamental Research Plan

Fundamental Research Funds for the Central Universities

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10566499/10539987.pdf?arnumber=10539987

Reference40 articles.

1. Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

2. Application-based review of GaN HFETs

3. GaN-Based RF Power Devices and Amplifiers

4. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

5. Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate

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