Reduction of electron and hole trapping in SiO2by rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95098
Reference8 articles.
1. Electron trapping in SiO2 at 295 and 77 °K
2. Avalanche Injection of Holes into SiO2
3. Reduction of electron trapping in silicon dioxide by high‐temperature nitrogen anneal
4. The effects of water on oxide and interface trapped charge generation in thermal SiO2films
5. Abstract: Electrical and structural characteristics of the nitrogen reaction at SiO2–Si interfaces
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