Electrical properties of low-temperature SiO2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times
Author:
Affiliation:
1. Department of Applied Physics, Korea University, Sejong 30019, Republic of Korea
2. DNF Co., Ltd., 142 Daehwa-ro 132 beon-gil, Daedeok-gu, Daejeon 34366, Republic of Korea
Funder
Korea Institute of Energy Technology Evaluation and Planning
BK21 FOUR of Ministry of Education and National Research Foundation of Korea
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0069188
Reference35 articles.
1. Technology of Integrated Circuits
2. Photoelectron emission microscopy of ultrathin oxide covered devices
3. High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal–Organic Silicon Precursor and Oxygen Radical
4. Hole trapping and trap generation in the gate silicon dioxide
5. Characterization of Polymetal Gate Transistors With Low-Temperature Atomic-Layer-Deposition-Grown Oxide Spacer
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