Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics-Reference-Cited by-同舟云学术

Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics

Published:2013-07-15 Issue:3 Volume:103 Page:033502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Minoura Yuya,Kasuya Atsushi,Hosoi Takuji,Shimura Takayoshi,Watanabe Heiji

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4813829

Reference31 articles.

1. Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

2. Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

3. Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2

4. First-principles study to obtain evidence of low interface defect density at Ge/GeO2 interfaces

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of Germanium Nanocrystals and Amorphous Nanoclusters in GeO[SiO] and GeO[SiO2] Films Using Electron Beam Annealing;Technical Physics;2024-01

2. Formation of germanium nanocrystals and amorphous nanoclusters in GeSiOx films using electron beam annealing;Vacuum;2022-03

3. Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor;International Journal of Energy Research;2021-04-13

4. Influence of interlayer GeOx thickness on band alignment of Al2O3/GeOx/Ge structure;Materials Science in Semiconductor Processing;2020-07

5. Hole mobility enhancement observed in (110)-oriented strained Si;Japanese Journal of Applied Physics;2020-02-07