Influence of interlayer GeOx thickness on band alignment of Al2O3/GeOx/Ge structure-Reference-Cited by-同舟云学术

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Influence of interlayer GeOx thickness on band alignment of Al2O3/GeOx/Ge structure

Published:2020-07 Issue: Volume:113 Page:105051
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Xiang Jinjuan,Li Tingting,Yu Jiahan,Wang Xiaolei,Ma Xueli,Gao Jianfeng,Zhao Chao,Wang Wenwu

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference52 articles.

1. Surface analytical studies of interfaces in organic semiconductor devices;Gao;Mater. Sci. Eng. R Rep.,2010

2. Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates;He;Surf. Sci. Rep.,2013

3. On the alleviation of Fermi-level pinning by ultrathin insulator layers in Schottky contacts;Mönch;J. Appl. Phys.,2012

4. Band alignment at metal–semiconductor and metal–oxide interfaces;Robertson;Phys. Status Solidi,2010

5. Recent advances in Schottky barrier concepts;Tung;Mater. Sci. Eng. R Rep.,2001

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