On the alleviation of Fermi-level pinning by ultrathin insulator layers in Schottky contacts
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3699180
Reference67 articles.
1. A New Route to Zero-Barrier Metal Source/Drain MOSFETs
2. Fermi-level depinning for low-barrier Schottky source/drain transistors
3. Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures
4. A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film
5. Ohmic contact formation on n-type Ge
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