Measurement of residual strain in InGaAs buffer layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358460
Reference11 articles.
1. Lattice‐strained heterojunction InGaAs/GaAs bipolar structures: Recombination properties and device performance
2. Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10-2to 108Hz
3. Strain relaxation of compositionally graded InxGa1−xAs buffer layers for modulation‐doped In0.3Ga0.7As/In0.29Al0.71As heterostructures
4. Influence of lattice misfit on heterojunction bipolar transistors with lattice‐mismatched InGaAs bases
5. The effect of substrate growth area on misfit and threading dislocation densities in mismatched heterostructures
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1. Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction;Japanese Journal of Applied Physics;2017-07-18
2. Nitrogen-induced localized level observed by photoreflectance in GaAsN thin films grown by chemical beam epitaxy;Journal of Crystal Growth;2013-12
3. Acceptor Levels due to a Complex Including the Nitrogen–Hydrogen Bond in GaAsN Films Grown by Chemical Beam Epitaxy;Japanese Journal of Applied Physics;2013-05-01
4. Structural and electronic properties of GaAs0.64P0.19Sb0.17 on GaAs;Applied Physics Letters;2012-12-17
5. Bond lengths and lattice structure of InP0.52Sb0.48 grown on GaAs;Applied Physics Letters;2012-08-27
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