Acceptor Levels due to a Complex Including the Nitrogen–Hydrogen Bond in GaAsN Films Grown by Chemical Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference25 articles.
1. 1-eV solar cells with GaInNAs active layer
2. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
3. Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source
4. Hydrogen reduction in GaAsN thin films by flow rate modulated chemical beam epitaxy
5. Effect of growth rate and gallium source on GaAsN
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