Strain relaxation of compositionally graded InxGa1−xAs buffer layers for modulation‐doped In0.3Ga0.7As/In0.29Al0.71As heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106429
Reference17 articles.
1. Strain relief study concerning the InxGa1−xAs/GaAs (0.07
2. High-quality InxGa1−xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates
3. Photoluminescence of an InAlAs/InGaAs Quantum Well Structure Grown on a GaAs Substrate
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5. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates
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