Nitrogen-induced localized level observed by photoreflectance in GaAsN thin films grown by chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference33 articles.
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4. Effect of nitrogen on the band structure of GaInNAs alloys;Shan;Journal of Applied Physics,1999
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1. Overlapping effects of the optical transitions of GaNAs thin films grown by molecular beam epitaxy;Thin Solid Films;2020-05
2. Electromodulation spectroscopy of highly mismatched alloys;Journal of Applied Physics;2019-10-14
3. Control of hydrogen and carbon impurity inclusion during the growth of GaAsN thin film by atomic layer epitaxy;Japanese Journal of Applied Physics;2015-12-16
4. Effect of Interatomic Distance of Constituent Nitrogen Atoms on its Localized Electronic State in Dilute GaAsN Thin Films Investigated by a Photoreflectance Spectroscopy;Energy Procedia;2014
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