Effect of nitrogen on the electronic band structure of group III-N-V alloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.4211/fulltext
Reference23 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Luminescence quenching and the formation of the GaP1−xNxalloy in GaP with increasing nitrogen content
3. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
4. N incorporation in InP and band gap bowing of InNxP1−x
5. Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements
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