Structural and electronic properties of GaAs0.64P0.19Sb0.17 on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4772550
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1. Calculation of energy band gaps in quaternary iii/v alloys
2. A novel double heterostructure: The GaAs/GaPAsSb system
3. Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs
4. Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs
5. $\hbox{InGaP/GaAs}_{0.57}\hbox{P}_{0.28} \hbox{Sb}_{0.15}/\hbox{GaAs}$ Double HBT With Weakly Type-II Base/Collector Junction
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1. Temperature dependence study of near-band-edge transitions of compressively strained quaternary GaAsPSb layer by photoreflectance and piezoreflectance spectroscopy;Japanese Journal of Applied Physics;2014-04-23
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