Comparison of interfacial and electrical characteristics of HfO2 and HfAlO high-k dielectrics on compressively strained Si1−xGex
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2201887
Reference20 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. The characteristic of HfO2 on strained SiGe
3. Gate dielectrics on strained-Si/SiGe heterolayers
4. Effects of annealing temperature on the characteristics of silicate/HfO2 insulator formed on the p-Si/Si0.8Ge0.2 and p-Si/Si0.8Ge0.2/intrinsic-Si (20Å) substrates
5. Characteristics of ultrathin HfO2 gate dielectrics on strained-Si0.74Ge0.26 layers
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2. Growth of the orthorhombic phase and inhibition of charge injection in ferroelectric HfO2-based MFIS memory devices with a high-permittivity dielectric seed layer;Science China Materials;2022-07-27
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4. Interfacial and electrical characteristics of tetragonal HfO2/Al2O3 multilayer grown on AlGaN/GaN;Journal of Materials Science: Materials in Electronics;2018-02-10
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