Characteristics of ultrathin HfO2 gate dielectrics on strained-Si0.74Ge0.26 layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1589165
Reference10 articles.
1. Oxidation-induced traps near SiO2/SiGe interface
2. High dielectric constant Hf–Sn–Ti–O thin films
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1. Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating;Nature Communications;2016-02-12
2. Local structure and energy-band alignment of HfO2 and HfO2–La2O3 on strained Si0.65Ge0.35;Journal of Alloys and Compounds;2014-09
3. Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs;Microelectronic Engineering;2013-12
4. Effect of nitrogen passivation on the interfacial property and band offset of HfLaO/SiGe;Journal of Physics D: Applied Physics;2013-11-27
5. Annealing temperature dependence of interface characteristic and energy-band alignment in ultra-thin HfLaO/Si and HfLaO/SiGe interfaces;Materials Chemistry and Physics;2013-11
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