Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs-Reference-Cited by-同舟云学术

Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs

Published:2013-12 Issue: Volume:112 Page:80-83
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Park Min Sang,Kim Yonghyun,Lee Kyong Taek,Kang Chang Yong,Min Byoung-Gi,Oh Jungwoo,Majhi Prashant,Tseng Hsing-Huang,Lee Jack C.,Banerjee Sanjay K.,Lee Jeong-Soo,Jammy Raj,Jeong Yoon-Ha

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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5. Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate

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