Annealing temperature dependence of interface characteristic and energy-band alignment in ultra-thin HfLaO/Si and HfLaO/SiGe interfaces
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference23 articles.
1. Structure and dielectric properties of amorphous high-κoxides: HfO2, ZrO2, and their alloys
2. Ab initiostudy of the electrostatic dipole modulation due to cation substitution in HfO2/SiO2interfaces
3. Characteristics of ultrathin HfO2 gate dielectrics on strained-Si0.74Ge0.26 layers
4. Local Dielectric Property of Hafnium and Lanthanum Atoms in HfLaOx
5. Physical and electrical characteristics of high-κ gate dielectric Hf(1−x)LaxOy
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1. Determination of the Band Alignment of a-IGZO/a-IGMO Heterojunction for High-Electron Mobility Transistor Application;physica status solidi (RRL) - Rapid Research Letters;2017-09-07
2. Band alignment and interfacial chemical structure of the HfLaO/InGaZnO4 heterojunction investigated by x-ray photoelectron spectroscopy;Journal of Physics D: Applied Physics;2017-03-09
3. Modulation of charge trapping and current-conduction mechanism of TiO2-doped HfO2 gate dielectrics based MOS capacitors by annealing temperature;Journal of Alloys and Compounds;2015-10
4. Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-01
5. Effect of nitrogen passivation on the interfacial property and band offset of HfLaO/SiGe;Journal of Physics D: Applied Physics;2013-11-27
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