Determination of the Band Alignment of a-IGZO/a-IGMO Heterojunction for High-Electron Mobility Transistor Application
Author:
Affiliation:
1. School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China; Chengdu 610054 P.R. China
2. State Key Laboratory of Electronic Thin Films and Integrated Devices; Chengdu 610054 P.R. China
Funder
National Natural Science Foundation of China
Fundamental Research Funds for the Central Universities
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Reference31 articles.
1. Present status of amorphous In–Ga–Zn–O thin-film transistors
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3. Effects of e-beam deposited gate dielectric layers with atmospheric pressure plasma treatment for IGZO thin-film transistors
4. Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric
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