Physical and electrical characteristics of high-κ gate dielectric Hf(1−x)LaxOy-Reference-Cited by-同舟云学术

Physical and electrical characteristics of high-κ gate dielectric Hf(1−x)LaxOy

Published:2006-06 Issue:6 Volume:50 Page:986-991
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Wang X.P.,Li M.F.,Chin Albert,Zhu C.X.,Shao Jun,Lu W.,Shen X.C.,Yu X.F.,Chi Ren,Shen C.,Huan A.C.H.,Pan J.S.,Du A.Y.,Lo Patrick,Chan D.S.H.,Kwong Dim-Lee

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Semiconductor Industry Association (SIA): International technology roadmap for semiconductors (ITRS), online at http://public.itrs.net, ed. 2005.

2. High-κ gate dielectrics: current status and materials properties considerations;Wilk;J Appl Phys,2001

3. Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics;Zhu;IEEE Electron Dev Lett,2002

4. MOS characteristics of ultrathin CVD HfAlO gate dielectrics;Bae;IEEE Electron Dev Lett,2003

5. Electrical and physical characteristics of ultrathin hafnium silicate films with polycrystalline silicon and TaN gates;Gopalan;Appl Phys Lett,2002

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