Work Function Control on High K Metal Gate Stacks
Author:
Publisher
The Electrochemical Society
Link
https://iopscience.iop.org/article/10.1149/1.3206605/pdf
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Localized Tunneling Phenomena of Nanometer Scaled High- ${K}$ Gate-Stack;IEEE Transactions on Electron Devices;2017-08
2. Low-frequency noise analysis of DRAM peripheral transistors with La cap;2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT);2014-10
3. Low-frequency noise assessment of border traps in Al2O3 capped DRAM peripheral MOSFETs;Semiconductor Science and Technology;2014-09-15
4. Improvement on programming and erasing speeds for charge-trapping flash memory device with SiGe buried channel;Solid-State Electronics;2010-10
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