Electrical and physical characteristics of ultrathin hafnium silicate films with polycrystalline silicon and TaN gates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1485123
Reference2 articles.
1. Hafnium and zirconium silicates for advanced gate dielectrics
2. Tantalum nitride metal gate FD-SOI CMOS FETs using low resistivity self-grown bcc-tantalum layer
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