Composition optimization and UV-annealing dependence on the electrical properties of Hf1−x Si x O2 /Si gate stacks-Reference-Cited by-同舟云学术

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Composition optimization and UV-annealing dependence on the electrical properties of Hf1−x Si x O2 /Si gate stacks

Published:2011-04-05 Issue:5 Volume:43 Page:865-868
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

He G.,Zhang L. D.,Liu M.,Fang Q

Funder

National Natural science Foundation of China

Royal Society UK

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sia.3647/fullpdf

Reference23 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon

3. Effects of annealing conditions on optical and electrical characteristics of titanium dioxide films deposited by electron beam evaporation

4. The structural and interfacial properties of HfO2/Si by the plasma oxidation of sputtered metallic Hf thin films

5. Effect of postdeposition annealing on the thermal stability and structural characteristics of sputtered HfO2 films on Si (100)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates;Surface Science Reports;2013-03

2. CVD-derived Hf-based High-k Gate Dielectrics;Critical Reviews in Solid State and Materials Sciences;2013-01

3. Review and Perspective of Hf-based High-kGate Dielectrics on Silicon;Critical Reviews in Solid State and Materials Sciences;2012-07

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