Bipolar conductivity in ferroelectric La:HfZrO films-Reference-Cited by-同舟云学术

Bipolar conductivity in ferroelectric La:HfZrO films

Published:2021-06-28 Issue:26 Volume:118 Page:262903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Perevalov Timofey V.¹²^ORCID,Gismatulin Andrei A.¹^ORCID,Gritsenko Vladimir A.¹²³^ORCID,Prosvirin Igor' P.⁴^ORCID,Mehmood Furqan⁵^ORCID,Mikolajick Thomas⁵⁶^ORCID,Schroeder Uwe⁵^ORCID

Affiliation:

1. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Ave., 630090 Novosibirsk, Russia

2. Novosibirsk State University, 2 Pirogov Str., 630090 Novosibirsk, Russia

3. Novosibirsk State Technical University, 20 Marx Ave., 630073 Novosibirsk, Russia

4. Boreskov Institute of Catalysis SB RAS, 5 Lavrentiev Ave., 630090 Novosibirsk, Russia

5. NaMLab gGmbH, Noethnitzer Str., 64 a, 01187 Dresden, Germany

6. Chair of Nanoelectronics, TU Dresden, 01062 Dresden, Germany

Funder

Russian Foundation for Basic Research

Ministry of Education and Science of the Russian Federation

Deutsche Forschungsgemeinschaft

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0050748

Reference28 articles.

1. Memory technology—a primer for material scientists

2. A 64-Mb Embedded FRAM Utilizing a 130-nm 5LM Cu/FSG Logic Process

3. The Past, the Present, and the Future of Ferroelectric Memories

4. Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

5. Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films

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