Oxygen Vacancies as Traps Responsible for La-Doped Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Charge Transport-Reference-Cited by-同舟云学术

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Oxygen Vacancies as Traps Responsible for La-Doped Hf_0.5Zr_0.5O₂ Charge Transport

Published:2023-07-20 Issue:30 Volume:127 Page:14883-14890
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Perevalov Timofey V.¹^ORCID,Gismatulin Andrei A.¹^ORCID,Prosvirin Igor P.²^ORCID,Pustovarov Vladimir A.³^ORCID,Gritsenko Vladimir A.¹⁴^ORCID

Affiliation:

1. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Avenue, 630090 Novosibirsk, Russia

2. Boreskov Institute of Catalysis of SB RAS, 5 Lavrentiev Avenue, 630090 Novosibirsk, Russia

3. Ural Federal University, 19 Mira Str., 620002 Yekaterinburg, Russia

4. Novosibirsk State Technical University, 20 K. Marx Avenue, 630073 Novosibirsk, Russia

Funder

Russian Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.3c01798

Reference41 articles.

1. The Past, the Present, and the Future of Ferroelectric Memories

2. Memory technology—a primer for material scientists

3. Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

4. Impact of different dopants on the switching properties of ferroelectric hafniumoxide

5. Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping

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1. Influence of point defects on charge transport in nickel ferrite NiFe2O4;Computational Materials Science;2025-01

2. Artificial nociceptor based on interface engineered ferroelectric volatile memristor;Applied Materials Today;2024-08

3. Corrosion behaviors of Zr-Sn-Nb alloys: Influence of different concentration dissolved oxygen environment and trace V element on the anti-corrosion properties;Journal of Nuclear Materials;2024-07

4. Polarizable Nonvolatile Ferroelectric Gating in Monolayer MoS₂ Phototransistors;ACS Applied Materials & Interfaces;2024-02-21

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