Effects of annealing temperature on the characteristics of silicate/HfO2 insulator formed on the p-Si/Si0.8Ge0.2 and p-Si/Si0.8Ge0.2/intrinsic-Si (20Å) substrates-Reference-Cited by-同舟云学术

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Effects of annealing temperature on the characteristics of silicate/HfO2 insulator formed on the p-Si/Si0.8Ge0.2 and p-Si/Si0.8Ge0.2/intrinsic-Si (20Å) substrates

Published:2005-10 Issue:1-4 Volume:200 Page:258-263
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Jeong S.H.,Roh Y.,Lee N.-E.,Yang C.-W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference13 articles.

1. Fundamental mechanisms of film growth;Hull,1999

2. Strained silicon heterostructures: materials and devices;Maiti,2001

3. Oxidation-induced traps near SiO2/SiGe interface

4. High hole mobilities in fully-strained Si/sub 1-x/Ge/sub x/ layers (0.3>x>0.4) and their significance for SiGe pMOSFET performance

5. Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of oxygen partial pressure on structural and electrical characteristics of HfAlO high-k gate dielectric grown on strained SiGe by pulsed-laser deposition;Materials Science in Semiconductor Processing;2006-12

2. Comparison of interfacial and electrical characteristics of HfO2 and HfAlO high-k dielectrics on compressively strained Si1−xGex;Applied Physics Letters;2006-05

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