Effects of oxygen partial pressure on structural and electrical characteristics of HfAlO high-k gate dielectric grown on strained SiGe by pulsed-laser deposition-Reference-Cited by-同舟云学术

Effects of oxygen partial pressure on structural and electrical characteristics of HfAlO high-k gate dielectric grown on strained SiGe by pulsed-laser deposition

Published:2006-12 Issue:6 Volume:9 Page:940-944
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Curreem K.K.S.,Lee P.F.,Dai J.Y.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Electrical properties of high permittivity ZrO2 gate dielectrics on strained-Si

3. Characteristics of HfO2 thin films grown by plasma atomic layer deposition

4. Characterization and process effects of HfO2 thin films grown by metal-organic molecular beam epitaxy

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