Characterization and process effects of HfO2 thin films grown by metal-organic molecular beam epitaxy-Reference-Cited by-同舟云学术

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Characterization and process effects of HfO2 thin films grown by metal-organic molecular beam epitaxy

Published:2005-11 Issue:1 Volume:123 Page:20-30
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Kim Myoung-Seok,Ko Young-Don,Yun Minseong,Hong Jang-Hyuk,Jeong Min-Chang,Myoung Jae-Min,Yun Ilgu

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference32 articles.

1. Structure and stability of ultrathin zirconium oxide layers on Si(001)

2. Nitrogen plasma annealing for low temperature Ta2O5 films

3. Physical characterization of thin ALD–Al2O3 films

4. Characterisation of HfO2 deposited by photo-induced chemical vapour deposition

5. Dielectric property and conduction mechanism of ultrathin zirconium oxide films

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