Characteristics of HfO2 thin films grown by plasma atomic layer deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2005370
Reference13 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Correlation of annealing effects on local electronic structure and macroscopic electrical properties for HfO2 deposited by atomic layer deposition
3. T. Suntola,Handbook of Thin Film Process Technology, 1st ed. (Institute of Physics, London, 1995), p. 71–81.
4. Atomic Layer Epitaxy Growth of TiN Thin Films
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