Biaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility-Reference-Cited by-同舟云学术

Biaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility

Published:2013-10-28 Issue:16 Volume:114 Page:164512
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kim SangHyeon,Yokoyama Masafumi,Nakane Ryosho,Ichikawa Osamu,Osada Takenori,Hata Masahiko,Takenaka Mitsuru,Takagi Shinichi

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4828481

Reference15 articles.

1. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

2. III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation

3. $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

4. In[sub 0.7]Ga[sub 0.3]As Channel n-MOSFET with Self-Aligned Ni–InGaAs Source and Drain

5. III–V Multiple-Gate Field-Effect Transistors With High-Mobility $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Channel and Epi-Controlled Retrograde-Doped Fin

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phase decomposition in the Ni–InGaAs system at high annealing temperature;Journal of Materials Science;2023-10

2. Investigation Influence of Channel Transport on Output Characteristics in Sub-100nm Heterojunction Tunnel FET;IEEE Journal of the Electron Devices Society;2021

3. Electron mobility of strained InGaAs long-channel MOSFETs: From scattering rates to TCAD model;Solid-State Electronics;2020-10

4. Thermal stress distribution in a laser array structure selectively grown on V-groove-patterned silicon;AIP Advances;2018-08

5. The Physical Mechanisms Behind the Strain-Induced Electron Mobility Increase in InGaAs-On-InP MOSFETs;IEEE Transactions on Electron Devices;2018-07