Author:
Carapezzi Stefania,Reggiani Susanna,Gnani Elena,Gnudi Antonio
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Enhancement technologies and physical understanding of electron mobility in III-V n-MOSFETs with strain and MOS interface buffer engineering;Kim,2011
2. Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain
3. Biaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility
4. Strained extremely-thin body In0.53Ga0.47As-on-insulator MOSFETs on Si substrates;Kim,2013
5. Strain-induced increase of electron mobility in ultra-thin InGaAs-OI MOS transistors;Krivec,2017
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