Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain-Reference-Cited by-同舟云学术

Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain

Published:2012-05-07 Issue:19 Volume:100 Page:193510
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim SangHyeon,Yokoyama Masafumi,Taoka Noriyuki,Nakane Ryosho,Yasuda Tetsuji,Ichikawa Osamu,Fukuhara Noboru,Hata Masahiko,Takenaka Mitsuru,Takagi Shinichi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4714770

Reference15 articles.

1. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

2. Impact of ⟨110⟩ uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors

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