Misfit strain, relaxation, and band‐gap shift in GaxIn1−xP/InP epitaxial layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356147
Reference23 articles.
1. Surface morphology and lattice distortion of heteroepitaxial GaInP on InP
2. Surface morphology and lattice distortion of heteroepitaxial GaInP on InP
3. The effect of elastic strain on energy band gap and lattice parameter in III‐V compounds
4. Energy band‐gap shift with elastic strain in GaxIn1−xP epitaxial layers on (001) GaAs substrates
5. Effect of mismatch strain on band gap in III‐V semiconductors
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