A fully verified theoretical analysis of strain-photonic coupling for quantum wells embedded in wavy nanoribbons-Reference-Cited by-同舟云学术

A fully verified theoretical analysis of strain-photonic coupling for quantum wells embedded in wavy nanoribbons

Published:2018 Issue:26 Volume:10 Page:12657-12664
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhang Jiushuang¹²³⁴⁵,Xu Yun¹²³⁴⁵^ORCID,Jiang Yu¹²³⁴⁵,Bai Lin¹²³⁴⁵,Chen Huamin¹²³⁴⁵,Li Jian¹²³⁴⁵,Wang Lei¹²³⁴⁵,Wu Weitong¹²³⁴⁵,Song Guofeng¹²³⁴⁵

Affiliation:

1. Institute of Semiconductors

2. Chinese Academy of Sciences

3. Beijing 100083

4. China

5. College of Materials Science and Opto-Electronic Technology

Abstract

For optoelectronic devices, an attractive research field involves the flexible adjustment of the band gap in semiconductor quantum well (QW) structures by strain engineering.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR01937A

Reference32 articles.

1. Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2

2. Strain-induced modulation of band structure of silicon

3. Engineering direct-indirect band gap transition in wurtzite GaAs nanowires through size and uniaxial strain

4. Silicon Device Scaling to the Sub-10-nm Regime

5. Tailoring Exciton Dynamics by Elastic Strain-Gradient in Semiconductors

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