Engineering direct-indirect band gap transition in wurtzite GaAs nanowires through size and uniaxial strain
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4718026
Reference31 articles.
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2. Performance of $n$-Type InSb and InAs Nanowire Field-Effect Transistors
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